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Dual P-Channel Enhancement Mode Field Effect Transistor FEATURES
-30V, -4.5A, RDS(ON) = 58m @VGS = -10V. RDS(ON) = 85m @VGS = -4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Lead free product is acquired. Surface mount Package.
D1 8 D1 7
CEM4953A
D2 6
D2 5
SO-8 1
1 S1
2 G1
3 S2
4 G2
ABSOLUTE MAXIMUM RATINGS
Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Pulsed
a
TA = 25 C unless otherwise noted Symbol VDS VGS ID IDM PD TJ,Tstg Limit -30 Units V V A A W C
20
-4.5 -15 2.0 -55 to 150
Maximum Power Dissipation Operating and Store Temperature Range
Thermal Characteristics
Parameter Thermal Resistance, Junction-to-Ambient b Symbol RJA Limit 62.5 Units C/W
Details are subject to change without notice . 1
Rev 3. 2010.May http://www.cetsemi.com
CEM4953A
Electrical Characteristics
Parameter Off Characteristics Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Body Leakage Current, Forward Gate Body Leakage Current, Reverse On Characteristics c Gate Threshold Voltage Static Drain-Source On-Resistance Dynamic Characteristics d Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Switching Characteristics d Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge Drain-Source Diode Forward Current b Drain-Source Diode Forward Voltage c td(on) tr td(off) tf Qg Qgs Qgd IS VSD VGS = 0V, IS = -4.5A VDS = -15V, ID = -4.5A, VGS = -10V VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6 11 5 30 7 10 3.3 1.8 -4.5 -1.3 22 10 60 14 13 ns ns ns ns nC nC nC A V gFS Ciss Coss Crss VDS = -15V, ID = -4.5A VDS = -15V, VGS = 0V, f = 1.0 MHz 8 640 130 95 S pF pF pF VGS(th) RDS(on) VGS = VDS, ID = -250A VGS = -10V, ID = -4.5A VGS = -4.5V, ID = -3.5A -1 48 64 -3 58 85 V m m BVDSS IDSS IGSSF IGSSR VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VGS = -20V, VDS = 0V -30 -1 100 -100 V
A
TA = 25 C unless otherwise noted Symbol Test Condition Min Typ Max Units
nA nA
Drain-Source Diode Characteristics and Maximun Ratings
Notes : a.Repetitive Rating : Pulse width limited by maximum junction temperature. b.Surface Mounted on FR4 Board, t < 10 sec. c.Pulse Test : Pulse Width < 300s, Duty Cycle < 2%. d.Guaranteed by design, not subject to production testing.
2
CEM4953A
30 -VGS=10,9,8,7V 10 25 C
-ID, Drain Current (A)
18 12 6 0 0.0
-ID, Drain Current (A)
24
8 6 4 2 0 TJ=125 C -55 C
-VGS=4V
1
2
3
4
5
6
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-VDS, Drain-to-Source Voltage (V) Figure 1. Output Characteristics
1200 1000 800 600 400 200 0 Crss 0 5 10 15 20 25 Coss Ciss 2.2 1.9 1.6 1.3 1.0 0.7 0.4 -100
-VGS, Gate-to-Source Voltage (V) Figure 2. Transfer Characteristics
ID=-5A VGS=-10V
RDS(ON), Normalized RDS(ON), On-Resistance(Ohms)
C, Capacitance (pF)
-50
0
50
100
150
200
-VDS, Drain-to-Source Voltage (V) Figure 3. Capacitance
1.3 1.2 1.1 1.0 0.9 0.8 0.7 0.6 -50 VDS=VGS
TJ, Junction Temperature( C) Figure 4. On-Resistance Variation with Temperature -IS, Source-drain current (A)
VGS=0V
10
1
VTH, Normalized Gate-Source Threshold Voltage
ID=-250A
10
0
-25
0
25
50
75
100
125
150
10
-1
0.4
0.6
0.8
1.0
1.2
1.4
TJ, Junction Temperature( C) Figure 5. Gate Threshold Variation with Temperature
-VSD, Body Diode Forward Voltage (V) Figure 6. Body Diode Forward Voltage Variation with Source Current
3
CEM4953A
-VGS, Gate to Source Voltage (V)
10 8 6 4 2 0 VDS=-15V ID=-4.5A 10
2
-ID, Drain Current (A)
RDS(ON)Limit 10
1
1ms 10ms 100ms DC
10
0
10
-1
0
2
4
6
8
10
10
-2
TA=25 C TJ=150 C Single Pulse 10
-2
10
-1
10
0
10
1
10
2
Qg, Total Gate Charge (nC) Figure 7. Gate Charge VDD t on V IN VGS RGEN G RL D VOUT td(on) VOUT
-VDS, Drain-Source Voltage (V) Figure 8. Maximum Safe Operating Area
toff tr
90%
td(off)
90% 10%
tf
10%
INVERTED
90%
S
VIN
50% 10%
50%
PULSE WIDTH
Figure 9. Switching Test Circuit
Figure 10. Switching Waveforms
r(t),Normalized Effective Transient Thermal Impedance
10
0
D=0.5
0.2
10
-1
0.1 0.05 0.02
PDM t1 t2
10
-2
Single Pulse
-4
1. RcJA (t)=r (t) * RcJA 2. RcJA=See Datasheet 3. TJM-TA = P* RcJA (t) 4. Duty Cycle, D=t1/t2
10
10
-3
10
-2
10
-1
10
0
10
1
10
2
Square Wave Pulse Duration (sec) Figure 11. Normalized Thermal Transient Impedance Curve
4

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